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Nanofabrication of Unijunction Transistors based on Metallophthalucyanines

K.O. Park

K.O. Park
This is an abstract for a poster to be presented at the Fifth Foresight Conference on Molecular Nanotechnology.

There will be a link from here to the full article when it is available on the web.

In the previous thought experiment, the electrical conductivity of N-channel Depletion-Type MOSFET's with metal containing phthalocyanine LB (Langmuir-Blodgett) films was presented. In this thought experiment, the electrical conductivity modulation of unijunction transistors (UJT) based on metallophthalocyanines, such as CuPc, PbPc, and Cu(PcF8)/NiPc, which are deposited onto P+ region of a Si-substrate is described. The three different kinds of unijunction transistors could be fabricated using an imprint nanolithography and a sublimed method along with a conventional microelectronic fabrication technique. They are called MPc unijunction transistors, denoted by MPc UJT (M=Pb, Cu) and by Cu(PcF8)/NiPc UJT, where Cu(PcF8)/NiPc is a bilayer to be deposited onto P+ region of a Si substrate. A switching voltage of Cu (PcF8)NiPc unijunction transistor (UJT) to be fabricated from this experiment could be larger than that of a conventional unijunction transistor due to large forward diode drop (about 2V or more) from a bilayer of Cu(PcF8)NiPc of the P+ region in Cu(PcF8)/NiPc UJT.

It is also expected that the switching voltages of CuPc UJT and PbPc UJT to be fabricated by doping with NO2 would be smaller than those of CuPc UJT and PbPc UJT to be fabricated by doping with O2. The switching time of the fabricated UJT from this work would be smaller than that of a conventional UJT adjusting the length from the P+ region to the source.

A unijunction transistor with a property of an S-shaped curve (Input vs. Output), which would be useful for neural network, could also be fabricated from this experiment.

*Corresponding Address:
K.O. Park Ph.D., All Rights Reserved.
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